Prediction of Barrier Localization in Modulated Nanowires

Lew Yan Voon, L.C., Lassen, B., Melnik, R.V.N. and Willatzen, M.

Journal of Applied Physics, 96(8): 4660-4662, 2004 [also was selected and published in the Electronic Journal of Nanoscale Science and Technology, Oct 18, 2004]


It is shown that the phenomenon of inversion recently discovered in a one-band model is much more general and is present in both multiband theories and in the excited states. Predictions of the one-band and of a four-band model are in good agreement for the ground state. A critical radius of around 15 Angstrom (7 Angstrom) is obtained for holes in InGaAs/InP (GaAs/AlAs) modulated nanowires. This phenomenon should be readily observable in both optical spectroscopy and transport.