Willatzen, M., Lassen, B., Melnik, R., Voon, L.C.L.Y.
Physics of Semiconductors, AIP Conference Proceedings, 27th International Conference on the Physics of Semiconductors, Eds. Menendez, J. and VanDeWalle, C.G. (ICPS-27, Flagstaff, AZ, USA, July 26-30, 2004), Pts A and B, 772: 871--872, 2005
The lowest valence-band states of In0.53Ga0.47As quantum rods with infinite barriers are studied using a four-band Burt-Foreman model. Special emphasis is given to the study of quantum-rod shape dependency and consequences for the aspect ratio at the crossing of the lowest two states. The nonseparability of the problem leads to complex ground-state envelope function (and level crossing) and demonstrates the difference between (infinite) quantum-wire structures and finite quantum-rod structures. Finally, calculations are presented for In0.53Ga0.47As quantum-rod structures embedded in InP. It is found that the aspect ratio at crossing of the two lowest states depends on the quantum-rod radius with InP finite barriers.
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