Barrier localization in the valence band of modulated nanowires

Voon, L.C.L.Y., Melnik, R., Lassen, B., Willatzen, M.

 Physics of Semiconductors, AIP Conference Proceedings, 27th International Conference on the Physics of Semiconductors, Eds. Menendez, J. and VanDeWalle, C.G. (ICPS-27, Flagstaff, AZ, USA, July 26-30, 2004), Pts A and B, 772: 873-874, 2005

Abstract:

We present evidence that the phenomenon of inversion recently discovered in a one-band model [L. C. Lew Yan Voon and M. Willatzen, J. Appl. Phys. 93, 9997 (2003)] is much more general and is present in both multiband theories and in the excited states. A critical radius of around 15 angstrom (7 angstrom) is obtained for holes in InGaAS/IRP (GaAs/AlAs) modulated nanowires.

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