Transient quantum drift-diffusion modelling of resonant tunneling heterostructure nanodevices

Radulovic, N., Willatzen, M., Melnik, R.V.N.

 Physics of Semiconductors, AIP Conference Proceedings, 27th International Conference on the Physics of Semiconductors, Eds. Menendez, J. and VanDeWalle, C.G. (ICPS-27, Flagstaff, AZ, USA, July 26-30, 2004), Pts A and B, 772: 1485-1486, 2005

Abstract:

In the present work, double-barrier GaAs/AlGaAs resonant tunneling heterostructure nanodevices are investigated. Numerical results, obtained by in-house developed software, based oil a transient quantum drift-diffusion model, are presented and discussed. In the model, quantum effects are incorporated via parameter dependencies on the carrier density gradients. Particular emphasis is given to the carrier densities and quasi-Fermi levels as a Junction of applied bias, and electrostatic potential profiles inside the resonant tunneling diodes and superlattices.  

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