Valence-Band Energies of GaAs/AlGaAs and InGaAs/InP V-groove $[1\bar{1}0]$ quantum wires

Lassen, B., Lew Yan Voon, L.C., Melnik, R.V.N. and Willatzen, M.

NanoTech-2004, Volume 3 (Chapter 2: Nanoscale Electronics and Quantum Devices), 49--52,  Boston, USA, 2004, ISBN:0-9728422-9-2

Abstract:

Comparison between the Burt-Foreman and Luttinger-Kohn valence-band Hamiltonians have been performed for realistic V-groove GaAs/AlGaAs and InGaAs/InP quantum wires. Significant differences in band structure is only found for InGaAs/InP quantum wires.

Keywords: semiconductors, nanostructures, V-groove, quantum wires, electronic properties, mathematical modeling, Luttinger-Kohn and Burt-Foreman Hamiltonians.