Electronic structure of free-standing InP and InAs nanowires
Lassen, B., Willatzen, M., Melnik, R.V.N. and Lew Yan Voon, L.C.
Journal of Materials Research, 21 (11), 2927-2935, 2006
An eight-band k.p theory that does not suffer from the spurious solution problem is demonstrated. It is applied to studying the electronic properties of InP and InAs free-standing nanowires. Band gaps and effective masses are reported as a function of size, shape, and orientation of the nanowires. We compare our results with experimental work and with other calculations.