Numerical Analysis of Fast Charge Transport in Optically Sensitive Semiconductors
Melnik, R.V.N. and Rimshans, J.
Dynamics of Continuous, Discrete, and Impulsive Systems B (Applications & Algorithms), Suppl. S, 102--107, 2003
Novel applications in optoelectronics require the development of semiconductor structures with fast photo-response. Transport processes in such devices are dependent on quite complex, essentially nonlinear phenomena. In this paper we derive a model for the description of fast transient photo-response phenomena in GaAs-based transistors, and develop an unconditionally monotone conservative and absolutely stable numerical scheme for its solution. Numerical results are presented for GaAs vertical field-effect phototransistor structure. A major emphasis is given to photo-charge response in the depletion region of the structure.